8-channel high-end SSD product
Next-gen SM2264 controller
Customization services for multi-mode, multi-scenario optimization
Support high-reliability features including E2E path protection and 2WL RAID
Up to 7,100 MB/s sequential read* and 5,500 MB/s sequential write*
Smoother application performance and faster game loading
* For 1TB capacity. See Specifications & Parameters for details.
Support E2E path protection, L2 PLP, static/dynamic SLC write, 2WL RAID, and other reliability algorithms and features to deliver sustained reliable performance
Support L1.2 low-power mode with power consumption less than 5mW, significantly extending endpoint device battery life
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Model |
AH660 |
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Form factor |
M.2 2280-S3-M |
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Capacity |
512GB |
1TB |
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Sequential read |
7100MB/s |
7100MB/s |
|
Sequential write |
4400MB/s |
5500MB/s |
|
Random read IOPS (4KB) |
820K |
850K |
|
Random write IOPS (4KB) |
680K |
700K |
|
TLC sequential write |
890MB/s |
1850MB/s |
|
TLC random write IOPS (4KB) |
235K |
355K |
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Dimensions |
80±0.15mm (L) × 22±0.15mm (W) × 2.38mm (H, max.) |
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|
Weight |
Max. 8g |
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Power consumption |
L1.2: < 5 mW Idle: < 60 mW Active: < 180 mW |
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Bus interface |
PCIe Gen 4*4 |
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|
NVMe standard |
NVMe 1.4 |
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Temperature |
Operating: 0°C to 70°C |
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Humidity |
5% to 95%, non-condensing |
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MTBF |
2 million hours |
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Shock |
Operating: Half-sine, 1,000G @ 1ms, 6 directions |
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|
Vibration |
Operating: Random, 5Grms, 2~2,000Hz, 3 axes |
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|
Supply voltage |
3.3V±5% |
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|
Ripple / Noise |
≤100mV |
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Address: 19th Floor, Block B, Ramaxel Houhai Center, Nanshan District, Shenzhen
Tel: +86 755-2681 3300
E-mail: support@unionmem.com
