Efficient firmware architecture delivers outstanding mixed random read/write performance
Page-interleaved block RAID algorithm significantly improves data availability
Industry-leading 7,000+ test cases ensure high compatibility and stability
High compatibility with CPUs, OS, and applications, supporting differentiated customization requirements
Intelligent controller algorithms combined with HMB mechanism significantly boost performance
Sequential read/write speed up to 6,800/5,600 MB/s
Hardware/software-accelerated firmware for smoother application performance
Support both x86 and non-x86 architecture ecosystems
Cover mainstream CPUs and OSes and support national cryptography algorithms
Stable cross-platform operation for complex application requirements
DRAM-less design significantly reduces hardware procurement costs
Support customized development, enhancing ROI
Enhanced SSD log monitoring across multiple dimensions greatly reduces maintenance costs
Model |
AE531 |
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Form factor |
M.2 2242-S3-M, M.2 2280-S3-M |
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Capacity |
512GB |
1TB |
2TB |
Sequential read |
6400MB/s |
6800MB/s |
6800MB/s |
Sequential write |
4500MB/s |
5600MB/s |
5600MB/s |
QLC sequential write |
115MB/s |
160MB/s |
260MB/s |
Random read IOPS (4KB) |
450K |
700K |
700K |
Random write IOPS (4KB) |
750K |
800K |
800K |
Dimensions |
42±0.15mm or 80±0.15mm (L) × 22±0.15mm (W) × 2.38mm (H, max.) |
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Weight |
Max. 3.6g or 6.0g |
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Power consumption |
L1.2: < 5 mW, Idle: < 50 mW, Active: < 160 mW |
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Bus interface |
PCIe Gen4 ×4 |
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NVMe standard |
NVMe 1.4 |
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Temperature |
Operating: 0°C to 70°C |
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Humidity |
5% to 95%, non-condensing |
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MTBF |
2 million hours |
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Shock |
Operating: Half-sine, 1000G @ 1ms, 6 directions |
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Vibration |
Operating: Random, 5Grms, 10~2,000Hz, 3 axes |
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Supply voltage |
3.3V±5% |
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Ripple / Noise |
≤100mV |
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Address: 19th Floor, Block B, Ramaxel Houhai Center, Nanshan District, Shenzhen
Tel: +86 755-2681 3300
E-mail: support@unionmem.com
