High-performance PCIe Gen 4 and NVMe 1.4 compliant.
Storage capacity is up to 7.68 TB in U.2 for highly available system designs.
Powered by 12 nm in-house controller and advanced processing technique, the performance is higher and the power consumption and cost are much lower.
Based on intelligent multi-stream aggregation technology, hot and cold data streams are layered, improving the performance and service life of ESSD while lowering the cost.
Achieves 7000 MB/s in sequential read and 1660K IOPS in random read speed.
Ultra-low consistent latency and High Quality of Service (QoS).
Superior enterprise-grade reliability: Flash-aware RAID, end-to-end data path protection, advanced ECC, secure erase, Power-loss protection.
Ultrastar Quality and Reliability.
UH810a/UH830a supports high-speed PCIe Gen 4 interfaces and adopts Union Memory’s in-house controller and firmware. In order to give full play to the ultimate performance of ESSDs, the controller sets multiple hardware acceleration modules in the key data path, enabling UH810a/UH830a to achieve 7000 MB/s in sequential read, 1660K IOPS in random read speed and 96 μs in average read latency, become an industry leader in terms of reading and writing delay, QoS and other features.
UH810a/UH830a incorporates a variety of intelligent algorithms and supports such enhanced features as variable sector, multi-threaded streams, atomic writing, and QoS. With combined dynamic and static wear-leveling algorithm, it can prolong the lifecycle of hard disk drives effectively. Moreover, it can protect partners' core data by virtue of dual firmware backup and upgrade mechanism and power failure protection mechanism.
UH810a/UH830a supports online activation of firmware upgrade within 1 second, so you do not need to Power On and Power Off again. Also, the ESSD supports Notify Hot Plug, Brute-Force Hot Plug, and various mainstream open-source tools.
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Product Series |
UH810a |
UH830a |
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NAND Flash |
3D eTLC |
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Capacity |
1.92 TB |
3.84 TB |
7.68 TB |
1.6 TB |
3.2 TB |
6.4 TB |
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Sequential Read(128 KB) |
7000 MB/s |
7000 MB/s |
7000 MB/s |
7000 MB/s |
7000MB/s |
7000 MB/s |
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Sequential Write(128 KB) |
2500 MB/s |
3800 MB/s |
3800 MB/s |
2700 MB/s |
4200 MB/s |
4200 MB/s |
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Random Read IOPS(4 KB) |
1300K |
1600K |
1600K |
1500K |
1660K |
1660K |
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Random Write IOPS(4 KB) |
100K |
150K |
150K |
300K |
300K |
300K |
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TBW |
3.50 PB |
7.01 PB |
14.02 PB |
8.76 PB |
17.52 PB |
35.04 PB |
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Basic Function |
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Average Read Latency(4 KB) |
96 μs |
96 μs |
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Average Write Latency(4 KB) |
17 μs |
14 μs |
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Endurance(4K Random) |
1 DWPD |
3 DWPD |
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Power(Typ./Max.) |
8.5 W/21 W |
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Form Factor |
U.2 |
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Sector Size |
Support 512/512+8/4096/4096+8/4096+64 sectors |
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Power Loss Protection |
Supported |
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Product Upgrade |
Supported Through NVMe Commands |
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Reliability |
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UBER |
e10-17 |
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MTBF |
2 million hours |
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AFR |
0.44% |
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Data Retention(Power Off) |
40℃, >3 months |
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Service Time |
5 years(Not exceed the TBW) |
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Protocol |
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Bus Interface and NVMe Protocol |
PCIe Gen 4*4, NVMe 1.4, SP*4 |
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TRIM |
Supported |
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Environmental Parameter |
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Storage Temperature |
-40℃ to 85℃ |
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Operating Temperature |
0℃ to 78℃ |
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Humidity |
5％ to 95％ R.H, non-condensing |
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Altitude |
Operating: -305 m to 3048 m Non-operating: -305 m to 12192 m |
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Vibration |
Operating: 2.17 GRMS(5 to 700 HZ) Storage: 3.13 GRMS(5 to 800 HZ) |
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Shock |
1000G@0.5ms (Half Sine Wave) |
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Power Supply |
DC 12V, +/-10% |
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Impulse Current (Max.) |
<3A@1s |
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Physical Form |
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Form Factor |
2.5 inches |
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Weight |
<350 g |
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Address: 19th Floor, Block B, Ramaxel Houhai Center, Nanshan District, Shenzhen
Tel: +86 755-2681 3300
E-mail: support@unionmem.com
