The Highlights of UH810a/UH830a

High-performance PCIe Gen 4 and NVMe 1.4 compliant.
Storage capacity is up to 7.68 TB in U.2 for highly available system designs. 
Powered by 12 nm in-house controller and advanced processing technique, the performance is higher and the power consumption and cost are much lower.
Based on intelligent multi-stream aggregation technology, hot and cold data streams are layered, improving the performance and service life of ESSD while lowering the cost.
Achieves up to 7000 MB/s in sequential read, up to 1660K IOPS in random read speed.
Ultra-low consistent latency and High Quality of Service (QoS).
Superior enterprise-grade reliability: Flash-aware RAID, end-to-end data path protection, advanced ECC, secure erase, Power-loss protection. 
Ultrastar Quality and Reliability.


Outstanding Performance

UH810a/UH830a supports high-speed PCIe Gen 4 interfaces and adopts Union Memory’s proprietary controller and firmware. In order to give full play to the ultimate performance of ESSDs, the controller sets multiple hardware acceleration modules in the key data path, enabling UH810a/UH830a to achieve up to 7000 MB/s in sequential read, up to 1660K IOPS in random read speed and 96 μs in average read latency, become an industry leader in terms of reading and writing delay, QoS and other features.

Perfect Experience

UH810a/UH830a incorporates a variety of intelligent algorithms and supports such enhanced features as variable sector, multi-threaded streams, atomic writing, and QoS. With combined dynamic and static wear-leveling algorithm, it can prolong the lifecycle of hard disk drives effectively. Moreover, it can protect partners' core data by virtue of dual firmware backup and upgrade mechanism and power failure protection mechanism.

Easy Maintenance

UH810a/UH830a supports online activation of firmware upgrade within 1 second, so you do not need to Power On and Power Off again. Also, the ESSD supports Notify Hot Plug, Brute-Force Hot Plug, and various mainstream open-source tools.

Specifications

Product Series

UH810a

UH830a

NAND Flash

Kioxia 96L 3D eTLC

Capacity

1.92 TB

3.84 TB

7.68 TB

1.6 TB

3.2 TB

6.4 TB

Sequential Read(128 KB)

7000 MB/s

7000 MB/s

7000 MB/s

7000 MB/s

7000MB/s

7000 MB/s

Sequential Write(128 KB)

2500 MB/s

3800 MB/s

3800 MB/s

2700 MB/s

4200 MB/s

4200 MB/s

Random Read IOPS(4 KB)

1300K

1600K

1600K

1500K

1660K

1660K

Random Write IOPS(4 KB)

100K

150K

150K

300K

300K

300K

TBW

3.50 PBW

7.01 PBW

14.02 PBW

8.76 PBW

17.52 PBW

35.04 PBW

NAND Flash

YMTC 64L 3D eTLC

Capacity

1.92 TB

3.84 TB

7.68 TB

1.6 TB

3.2 TB

Sequential Read(128 KB)

7000 MB/s

7000 MB/s

4500 MB/s

7000 MB/s

7000 MB/s

Sequential Write(128 KB)

2000 MB/s

3800 MB/s

3800 MB/s

2000 MB/s

4200 MB/s

Random Read IOPS(4 KB)

900K

1600K

960K

900K

1600K

Random Write IOPS(4 KB)

100K

150K

150K

200K

300K

TBW

3.50 PBW

7.01 PBW

14.02 PBW

8.76 PBW

17.52 PBW

Basic Function

Average Read Latency(4 KB)

96 μs

96 μs

Average Write Latency(4 KB)

17 μs

14 μs

Endurance(4K Random)

1 DWPD

3 DWPD

Power(Typ./Max.)

8.5 W/21 W

Form Factor

U.2

Sector Size

Support 512/512+8/4096/4096+8/4096+64 sectors

Power Loss Protection

Supported

Product Upgrade

Supported Through NVMe Commands

Reliability

UBER

e10-17

MTBF

2 million hours

AFR

0.44%

Data Retention(Power Off)

40, >3 months

Service Time

5 years(Not exceed the TBW)

Protocol

Bus Interface and NVMe Protocol

PCIe Gen 4*4, NVMe 1.4, SP*4

TRIM

Supported

Environmental Parameter

Storage Temperature

-40 to 85

Operating Temperature

0 to 78

Humidity

5 to 95 R.H, non-condensing

Altitude

Operating: -305 m to 3048 m

Non-operating: -305 m to 12192 m

Vibration

Operating: 2.17 GRMS(5 to 700 HZ)

Storage: 3.13 GRMS(5 to 800 HZ)

Shock

1000G@0.5ms (Half Sine Wave)

Power Supply

DC 12V, +/-10%

Impulse Current (Max.)

<3A@1s

Physical Form

Form Factor

2.5 inches

Weight

<350 g



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