UH811a/UH831a-Union Memory 

The Highlights of UH811a/UH831a

High-performance PCIe Gen 4 and NVMe 1.4 compliant.
Storage capacity is up to 7.68 TB in U.2 for highly available system designs. 
Powered by 12 nm in-house controller and advanced processing technique, the performance is higher and the power consumption and cost are much lower.
Based on intelligent multi-stream aggregation technology, hot and cold data streams are layered, improving the performance and service life of ESSD while lowering the cost.

Ultra-low consistent latency and High Quality of Service (QoS).

Superior enterprise-grade reliability: Flash-aware RAID, end-to-end data path protection, advanced ECC, secure erase, Power-loss protection. 

Ultrastar Quality and Reliability.



Outstanding Performance

UH811a/UH831a supports high-speed PCIe Gen 4 interfaces and adopts Union Memory’s in-house controller and firmware. In order to give full play to the ultimate performance of ESSDs, the controller sets multiple hardware acceleration modules in the key data path, enabling UH811a/UH831a to achieve 7100 MB/s in sequential read and 1700K IOPS in random read speed, become an industry leader in terms of reading and writing delay, QoS and other features.

Perfect Experience

UH811a/UH831a incorporates a variety of intelligent algorithms and supports such enhanced features as variable sector, multi-threaded streams, atomic writing, and QoS. With combined dynamic and static wear-leveling algorithm, it can prolong the lifecycle of hard disk drives effectively. Moreover, it can protect partners' core data by virtue of dual firmware backup and upgrade mechanism and power failure protection mechanism.

Easy Maintenance

UH811a/UH831a supports online activation of firmware upgrade within 1 second, so you do not need to Power On and Power Off again. Also, the ESSD supports Notify Hot Plug, Brute-Force Hot Plug, and various mainstream open-source tools.

Specifications

Product Series

UH811a

UH831a

Capacity

1.92 TB

3.84 TB

7.68 TB

1.6 TB

3.2 TB

6.4 TB

Sequential Read(128 KB)

7100 MB/s

7100 MB/s

7100 MB/s

7100 MB/s

7100 MB/s

7100 MB/s

Sequential Write(128 KB)

2500 MB/s

4500 MB/s

4500 MB/s

2500 MB/s

4500 MB/s

4500 MB/s

Random Read IOPS(4 KB)

900K

1700K

1700K

900K

1700K

1700K

Random Write IOPS(4 KB)

170K

240K

210K

280K

450K

400K

Power(Typ./Max.)

8.5 W/21 W

8.5 W/21 W

8.5 W/21 W

8.5 W/21 W

8.5 W/21 W

8.5 W/21 W

TBW

3.50 PB

7.01 PB

14.02 PB

8.76 PB

17.52 PB

35.04 PB

Endurance(4K Random)

1 DWPD

3 DWPD

Form Factor

U.2

NAND Flash

3D eTLC

Basic Function

Sector Size

Support 512/512+8/4096/4096+8/4096+64 sectors

Power Loss Protection

Supported

Product Upgrade

Supported Through NVMe Commands

Reliability

UBER

e10-17

MTBF

2 million hours

AFR

0.44%

Data Retention(Power Off)

40, >3 months

Service Time

5 years(Not exceed the TBW)

Protocol

Bus Interface and NVMe Protocol

PCIe Gen 4*4, NVMe 1.4, SP*4

TRIM

Supported

Environmental Parameter

Storage Temperature

-40 to 85

Operating Temperature

0 to 78

Humidity

5 to 95 R.H, non-condensing

Altitude

Operating: -305 m to 3048 m

Non-operating: -305 m to 12192 m

Vibration

Operating: 2.17 GRMS(5 to 700 HZ)

Storage: 3.13 GRMS(5 to 800 HZ)

Shock

1000G@0.5ms (Half Sine Wave)

Power Supply

DC 12V, +/-10%

Impulse Current (Max.)

<3A@1s

Physical Form

Form Factor

2.5 inches

Weight

<350 g



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