High-performance PCIe Gen 4 and NVMe 1.4 compliant.
Storage capacity is up to 7.68 TB in U.2 for highly available system designs.
Powered by 12 nm in-house controller and advanced processing technique, the performance is higher and the power consumption and cost are much lower.
Based on intelligent multi-stream aggregation technology, hot and cold data streams are layered, improving the performance and service life of ESSD while lowering the cost.
Ultra-low consistent latency and High Quality of Service (QoS).
Superior enterprise-grade reliability: Flash-aware RAID, end-to-end data path protection, advanced ECC, secure erase, Power-loss protection.
Ultrastar Quality and Reliability.UH811a/UH831a supports high-speed PCIe Gen 4 interfaces and adopts Union Memory’s in-house controller and firmware. In order to give full play to the ultimate performance of ESSDs, the controller sets multiple hardware acceleration modules in the key data path, enabling UH811a/UH831a to achieve 7100 MB/s in sequential read and 1700K IOPS in random read speed, become an industry leader in terms of reading and writing delay, QoS and other features.
UH811a/UH831a incorporates a variety of intelligent algorithms and supports such enhanced features as variable sector, multi-threaded streams, atomic writing, and QoS. With combined dynamic and static wear-leveling algorithm, it can prolong the lifecycle of hard disk drives effectively. Moreover, it can protect partners' core data by virtue of dual firmware backup and upgrade mechanism and power failure protection mechanism.
UH811a/UH831a supports online activation of firmware upgrade within 1 second, so you do not need to Power On and Power Off again. Also, the ESSD supports Notify Hot Plug, Brute-Force Hot Plug, and various mainstream open-source tools.
Product Series |
UH811a |
UH831a |
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Capacity |
1.92 TB |
3.84 TB |
7.68 TB |
1.6 TB |
3.2 TB |
6.4 TB |
Sequential Read(128 KB) |
7100 MB/s |
7100 MB/s |
7100 MB/s |
7100 MB/s |
7100 MB/s |
7100 MB/s |
Sequential Write(128 KB) |
2500 MB/s |
4500 MB/s |
4500 MB/s |
2500 MB/s |
4500 MB/s |
4500 MB/s |
Random Read IOPS(4 KB) |
900K |
1700K |
1700K |
900K |
1700K |
1700K |
Random Write IOPS(4 KB) |
170K |
240K |
210K |
280K |
450K |
400K |
Power(Typ./Max.) |
8.5 W/21 W |
8.5 W/21 W |
8.5 W/21 W |
8.5 W/21 W |
8.5 W/21 W |
8.5 W/21 W |
TBW |
3.50 PB |
7.01 PB |
14.02 PB |
8.76 PB |
17.52 PB |
35.04 PB |
Endurance(4K Random) |
1 DWPD |
3 DWPD |
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Form Factor |
U.2 |
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NAND Flash |
3D eTLC |
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Basic Function |
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Sector Size |
Support 512/512+8/4096/4096+8/4096+64 sectors |
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Power Loss Protection |
Supported |
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Product Upgrade |
Supported Through NVMe Commands |
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Reliability |
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UBER |
e10-17 |
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MTBF |
2 million hours |
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AFR |
0.44% |
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Data Retention(Power Off) |
40℃, >3 months |
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Service Time |
5 years(Not exceed the TBW) |
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Protocol |
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Bus Interface and NVMe Protocol |
PCIe Gen 4*4, NVMe 1.4, SP*4 |
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TRIM |
Supported |
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Environmental Parameter |
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Storage Temperature |
-40℃ to 85℃ |
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Operating Temperature |
0℃ to 78℃ |
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Humidity |
5% to 95% R.H, non-condensing |
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Altitude |
Operating: -305 m to 3048 m Non-operating: -305 m to 12192 m |
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Vibration |
Operating: 2.17 GRMS(5 to 700 HZ) Storage: 3.13 GRMS(5 to 800 HZ) |
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Shock |
1000G@0.5ms (Half Sine Wave) |
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Power Supply |
DC 12V, +/-10% |
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Impulse Current (Max.) |
<3A@1s |
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Physical Form |
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Form Factor |
2.5 inches |
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Weight |
<350 g |